乙酰丙酮镓
| 乙酰丙酮镓 | |
|---|---|
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| IUPAC名 (Z)-4-bis[(Z)-1-methyl-3-oxobut-1-enoxy]gallanyloxypent-3-en-2-one | |
| 别名 | Gallium acetylacetonate |
| 识别 | |
| CAS号 | 14405-43-7 
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| PubChem | 16717626 |
| 性质 | |
| 化学式 | GaC15H21O6 |
| 外观 | 白色固体 |
| 密度 | 1.42 g/cm3 |
| 若非注明，所有数据均出自标准状态（25 ℃，100 kPa）下。 | |
乙酰丙酮镓是一种配位化合物，化学式为Ga(C5H7O2)3，或者简写为Ga(acac)3。这种镓的配合物用于含镓材料的研究。乙酰丙酮镓分子有D3对称性，和其它八面体三乙酰丙酮盐同晶。[1]
应用
乙酰丙酮镓和水或臭氧作为前体，用原子层外延法（ALE）可以制得氧化镓薄膜。[2]Ga(acac)3也能用于低温生长高纯度氮化镓纳米线或纳米针。[3][4]
参考文献
- ^ Dymock, K.; Palenik, Gus J. "Tris(acetylacetonato)gallium(III)" Acta Crystallographica Section B: Structural Crystallography and Crystal Chemistry (1974), volume 30, 1364-6.doi:10.1107/S0567740874004833
- ^ "Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy". [2018-03-11]. （原始内容存档于2018-06-04）.
- ^ "Low-Temperature Catalytic Synthesis of Gallium Nitride Nanowires". [2018-03-11]. （原始内容存档于2021-09-24）.
- ^ "Temperature-controlled catalytic growth of one-dimensional gallium nitride nanostructures using a gallium organometallic precursor". [2018-03-11]. （原始内容存档于2018-06-08）.
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