Indium gallium aluminium nitride
Indium gallium aluminium nitride (InGaAlN, AlInGaN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as metalorganic chemical vapour deposition (MOCVD), molecular-beam epitaxy (MBE), pulsed laser deposition (PLD), etc.[1] This material is used for specialist opto-electronics applications, often in blue laser diodes and LEDs.
See also
[edit]References
[edit]- ^ "Aluminum Gallium Nitride - an overview | ScienceDirect Topics". www.sciencedirect.com. Retrieved 2022-09-04.
Indium(I) |
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Indium(I,III) | |||
Indium(III) |
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Gallium(-V) | |||
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Gallium(I) | |||
Gallium(II) | |||
Gallium(I,III) | |||
Gallium(III) |
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Al(I) |
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Al(II) | |||||
Al(III) |
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