Indium(III) selenide
| Names | |
|---|---|
| IUPAC name
Indium(III) selenide
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| Other names
indium selenide, indium sesquiselenide
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| Identifiers | |
| ECHA InfoCard | 100.031.821 |
PubChem CID
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CompTox Dashboard (EPA)
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| Properties | |
| In2Se3 | |
| Molar mass | 466.516 g/mol |
| Appearance | black crystalline solid |
| Density | 5.80 g/cm³ |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Indium(III) selenide is a compound of indium and selenium. It has potential for use in photovoltaic devices and has been the subject of extensive research. The two most common phases, α and β, have a layered structure, while γ has a "defect wurtzite structure." In all, five polymorphs are known: α, β, γ, δ, κ.[1] The α-β phase transition is accompanied by a change in electrical conductivity.[2] The band gap of γ-In2Se3 is approximately 1.9 eV.
Preparation
The method of production influences the polymorph generated. For example, thin films of pure γ-In2Se3 have been produced from trimethylindium (InMe3) and hydrogen selenide via MOCVD techniques.[3]
- 3 H2Se + 2 In(CH3)3 → In2Se3 + 6 CH4
A conventional route entails heating the elements in a seal-tube:[4]
- 3 Se + 2 In → In2Se3
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