最基本的可變電阻式記憶體是由上下兩層金屬電極以及中間一層過渡金屬氧化物(Transition metal oxide, TMO)所組成,主要的操作原理是利用過渡金屬氧化物的阻值,會隨著所加偏壓改變而產生不同的阻值,而如何辦別內部儲存的值,則由內部的阻值高低來做分別。通常會先對剛生產好的可變電阻式記憶體進行初始化,此過程被稱為Forming,必須對元件施加偏壓,當電場超過臨界值時介電層會發生崩潰現象,使介電層從高阻值轉為低阻值。而從Forming之後發生改變阻值的現象,若是從高阻態到低阻態的過程稱之為SET,相反地,從低阻態到高阻態的過程稱之為RESET。
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